Prof. Toyohiro Chikyow | NIMS |
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Prof. Atsushi Kohno | Fukuoka Univ. |
Dr. Jin Kawakita | NJMS |
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Dr. Pelka Joachim | Fraunhofer Institute |
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Prof. Sunglae Cho | University of Ulsan |
Prof. Jun Xu | Nanjing University |
Dr. Carlo Reita | CEA Leti |
Due to the increasing the variety of the devices and adopting new materials, electron devices are in the transition period in development. Recently FinFET becomes a major structure for logic device and TFET is designed for III-V for steep slope device. Ge or graphen transitor is proposed for low application and III-N is a candidate for next generation power device. New sensors have a concern because of IoT applications. At the same time, a lot of problems at interfaces are serious issue and process is critical. Also there is a demand for new characterization tools to evaluate nano surface or interface. The purpose of this session is to discuss about the new ideas of device, characterization, process technologies and related physical phenomena for logic, memory, power devices, and sensors. New materials are also involved for discussion. This session will encourage researchers in developing electron devices, new idea, and knowledge for future innovations.
1.Oxide/ nitride
2.Ge, Si, III-V, III-N
3.Dieletric /ferroelectic
4.New function materials
5.Surface and interface
6.MOS/MIS device
7.Memory
8.Sensor
9.3D integration
10.Process and characterization
Nobel Laureate Prof. SUZUKI special symposium
Superconducting materials and applications
Thermoelectric materials for sustainable development - ACT2017 (AAT)
Materials frontier for transparent advanced electronics
Magnetic oxide thin films and hetero-structures
Synthesis of functional materials for next generation innovative devices applications
Eco-product session
First circular
Flyer (Second circular / Call for papers)