IUMRS-ICAM 2017

MRS-JIUMRS-ICAM 2017 KYOTO

Symposia & Program

B-2 Advanced thin film materials for future electron device and sensor

Organizers:

Representative

Prof. Toyohiro Chikyow NIMS
Prof. Atsushi Kohno Fukuoka Univ.

Correspondence

Dr. Jin Kawakita NJMS

Co-Organizers

Dr. Pelka Joachim Fraunhofer Institute
Prof. Sunglae Cho University of Ulsan
Prof. Jun Xu Nanjing University
Dr. Carlo Reita CEA Leti

Scope:

Due to the increasing the variety of the devices and adopting new materials, electron devices are in the transition period in development. Recently FinFET becomes a major structure for logic device and TFET is designed for III-V for steep slope device. Ge or graphen transitor is proposed for low application and III-N is a candidate for next generation power device. New sensors have a concern because of IoT applications. At the same time, a lot of problems at interfaces are serious issue and process is critical. Also there is a demand for new characterization tools to evaluate nano surface or interface. The purpose of this session is to discuss about the new ideas of device, characterization, process technologies and related physical phenomena for logic, memory, power devices, and sensors. New materials are also involved for discussion. This session will encourage researchers in developing electron devices, new idea, and knowledge for future innovations.

Topics:

1.Oxide/ nitride
2.Ge, Si, III-V, III-N
3.Dieletric /ferroelectic
4.New function materials
5.Surface and interface
6.MOS/MIS device
7.Memory
8.Sensor
9.3D integration
10.Process and characterization

Keynote Speakers & Invited Speakers (tentative)

Leaflet